Core Excitons in Amorphous Semiconductors
- 24 December 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 53 (26), 2504-2507
- https://doi.org/10.1103/PhysRevLett.53.2504
Abstract
Core excitonic effects at the absorption edge were investigated with a combination of optical and synchrotron-radiation photoemission techniques in crystalline, amorphous, and amorphous-hydrogenated silicon and silicon-carbon alloys. Our results support a Frenkel-type nature of these excitons.
Keywords
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