A solution of the core-exciton issue for silicon and germanium
- 31 October 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 36 (4), 297-300
- https://doi.org/10.1016/0038-1098(80)90057-5
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Shallow-Deep Instabilities of Donor Impurity Levels and Excitons in Many-Valley SemiconductorsPhysical Review Letters, 1980
- Why Muons and Protons are Deep Donors in Si and GePhysical Review Letters, 1979
- Binding energies of core excitons in semiconductorsIl Nuovo Cimento B (1971-1996), 1979
- Large binding due to dispersive screening and bloch function interference in many-valley semiconductorsSolid State Communications, 1979
- Photoemission Studies of 2p Core Levels of Pure and Heavily Doped SiliconPhysica Status Solidi (b), 1978
- Soft-X-ray electroreflectance: Final-state effects on Si (2p) optical transitionsIl Nuovo Cimento B (1971-1996), 1977
- threshold spectra of doped silicon and silicon compoundsPhysical Review B, 1977
- Giant core-exciton effects on Si(111) 7 × 7 surfacesPhysics Letters A, 1977
- Core Excitons and the Soft-X-Ray Threshold of SiliconPhysical Review Letters, 1972
- Extreme Ultraviolet Transmission of Crystalline and Amorphous SiliconPhysical Review Letters, 1972