Preparation of Superconducting BaPb1-xBixO3 Thin Films by RF Sputtering
- 1 May 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (5), L231-234
- https://doi.org/10.1143/jjap.19.l231
Abstract
Superconducting BaPb1-x Bi x O3 thin films were successfully prepared by RF diode sputtering with a relatively high deposition rate of 50–120 Å/min and subsequent heat treatments. Their superconducting transition onsets are about 8 K. It was found that high oxygen partial pressure was a requisite for the preparation of BaPb1-x Bi x O3 thin films. Low oxygen pressure during discharge brings about poor films with coarse surfaces which have semiconducting high resistivity and broad transition.Keywords
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