Density of glow discharge amorphous silicon films determined by spectroscopic ellipsometry
- 15 October 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (8), 4894-4896
- https://doi.org/10.1063/1.357267
Abstract
The dielectric function of thin-film hydrogenated amorphous silicon (a-Si:H) grown on fused silica at different substrate temperatures has been investigated by spectroscopic ellipsometry. An improved interpretation of the ellipsometric data is based on a tetrahedron model that takes into account the influence of hydrogen incorporation in the amorphous network. It is shown that the film density can be derived from an accurate data interpretation, whereas the maximum value of the imaginary part of the dielectric function ε2max and the void volume fraction are not proportional to the density of a-Si:H films.Keywords
This publication has 12 references indexed in Scilit:
- Influence of powder formation in a silane discharge on a-Si:H film growth monitored by in situ ellipsometryJournal of Non-Crystalline Solids, 1993
- In situ ellipsometric study of the influence of powder formation on the initial growth of glow discharge a−Si:HThin Solid Films, 1993
- Optical dielectric function of hydrogenated amorphous silicon: Tetrahedron model and experimental resultsPhysical Review B, 1988
- Optical constants of amorphous hydrogenated germanium thin filmsApplied Optics, 1988
- Glow-discharge amorphous silicon: Growth process and structureMaterials Science Reports, 1987
- Oxidation of plasma-deposited hydrogenated amorphous siliconThin Solid Films, 1985
- Optical properties of thin filmsThin Solid Films, 1982
- Optical spectra of glow-discharge-deposited siliconPhilosophical Magazine Part B, 1979
- Optical Properties of SemiconductorsPhysical Review B, 1963
- Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen SubstanzenAnnalen der Physik, 1935