Reply to ’’Comment on ’A photoluminescence study of beryllium-doped GaAs grown by molecular beam epitaxy’ ’’
- 1 September 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (9), 6469-6470
- https://doi.org/10.1063/1.331491
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Comment on ’’A photoluminescence study of beryllium-doped GaAs grown by molecular beam epitaxy’’Journal of Applied Physics, 1982
- Electrical properties and photoluminescence of Te-doped GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1982
- A photoluminescence study of beryllium-doped GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1981
- Luminescence properties of GaAs-Ga1−x Alx As double heterostructures and multiquantum-well superlattices grown by molecular beam epitaxyApplied Physics Letters, 1981
- Carbon in molecular beam epitaxial GaAsApplied Physics Letters, 1981
- The effect of As2 and As4 molecular beam species on photoluminescence of molecular beam epitaxially grown GaAsApplied Physics Letters, 1980
- Luminescence and Excitation Spectra of Exciton Emission in GaAsPhysica Status Solidi (b), 1974