Ferroelectric Field Effect in Epitaxial Thin Film Oxide SrCuO 2 /Pb(Zr 0.52 Ti 0.48 )O 3 Heterostructures

Abstract
A ferroelectric field effect in epitaxial thin film SrCuO2/Pb(Zr0.52Ti0.48)O3 heterostructures was observed. A 3.5 percent change in the resistance of a 40 angstrom SrCuO2 layer (a parent high-temperature superconducting compound) was measured when the polarization field of the Pb(Zr0.52Ti0.48)O3 layer was reversed by the application of a pulse of small voltage (2 and Pb(Zr0.52Ti0.48)O3. This completely epitaxial thin film approach shows the possibility of making nonvolatile, low-voltage ferroelectric field effect devices for both applications and fundamental studies of field-induced doping in novel compounds like SrCuO2.