Electric field effect in high T c superconducting ultrathin YBa2Cu3O7−x films
- 23 December 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (26), 3470-3472
- https://doi.org/10.1063/1.105656
Abstract
A multilayer high Tc superconducting field‐effect transistor‐like structure was made from ultrathin YBa2Cu3O7−x films. An epitaxially grown dielectric SrTiO3 insulation layer, which had a forward bias breakdown voltage of about 20 V, allowed an electric field induced change in the channel layer of 1.25×1013 carrier/cm2 per volt of the gate voltage. A significant modulation of the normal state and superconducting properties was observed in samples with YBa2Cu3O7−x channel layers of a few unit cells thick. By applying gate voltage of different polarities, Tc was both suppressed and enhanced by ∼1 K. The resistance was modulated by as much as 20% in the normal state and by over 1500% near the zero resistance temperature.Keywords
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