Stacking-fault-induced defect creation in SiO2 on Si(100)
- 30 May 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (22), 1892-1894
- https://doi.org/10.1063/1.99734
Abstract
Decomposition of SiO2 films on Si(100) during ultrahigh‐vacuum anneal has been shown previously to be preceded, at low anneal temperatures, by electrical defect creation in metal‐oxide‐semiconductor structures. In this letter, the presence of stacking faults in a Si substrate is shown to be related to enhanced oxide decomposition during high‐temperature anneal. Decomposition is enhanced because of the creation of a larger number of nucleation centers for the formation of volatile SiO. These nucleation centers are the result of the metals gettered in the stacking faults close to the SiO2/Si interface.Keywords
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