Defect Microchemistry at the Si/Si Interface
- 1 June 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 58 (22), 2379-2382
- https://doi.org/10.1103/physrevlett.58.2379
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- High-Temperature SiDecomposition at the Si/Si InterfacePhysical Review Letters, 1985
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- Probing the transition layer at the SiO2-Si interface using core level photoemissionApplied Physics Letters, 1984
- The chemical structure of trapped charge sites formed at the Si/SiO2 interface by ionizing radiation as determined by XPSJournal of Vacuum Science and Technology, 1982
- ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafersJournal of Applied Physics, 1979