Low-Temperature Deposition of Silicon Dioxide Films by Photoinduced Decomposition of Tetraethoxysilane
- 1 July 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (7A), L1310
- https://doi.org/10.1143/jjap.28.l1310
Abstract
A new method has been proposed for depositing silicon dioxide films on semiconductors at low temperatures by using ultraviolet (UV) lights. In this method, UV light emitted from a low-pressure Hg lamp is irradiated onto spin-on material which contains tetraethoxysilane Si(OC2H5)4. The light decomposes this compound, leading to the formation of silicon dioxide films. It is found that the physical properties of silicon dioxide films deposited on silicon are similar to those of oxide films obtained by conventional deposition methods, Evidence is presented indicating that UV light irradiation plays an important role in the formation of silicon oxides.Keywords
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