Perturbation-Theory Investigation of the Exciton Ground State of Cubic Semiconductors in a Magnetic Field
- 15 April 1973
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 7 (8), 3798-3802
- https://doi.org/10.1103/physrevb.7.3798
Abstract
The influence of the degeneracy and anisotropy of the valence band on the exciton ground state in the low-magnetic-field region is investigated. Using first- and second-order perturbation theory, simple analytical expressions are given for the Zeeman splittings and the diamagnetic shifts of the eightfold-degenerate ground state. Selections rules for optical transitions and their dependence on polarization are discussed. The results are compared with available experimental data.Keywords
This publication has 12 references indexed in Scilit:
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971
- Energy Levels of Direct Excitons in Semiconductors with Degenerate BandsPhysical Review B, 1971
- Inversion-Asymmetry and Warping-Induced Interband Magneto-Optical Transitions in InSbPhysical Review B, 1969
- k·p Calculation of Effective Masses in Zinc-Blende SemiconductorsPhysical Review B, 1969
- Interband magneto-optical absorption in gallium arsenideJournal of Physics and Chemistry of Solids, 1968
- Impurity and Exciton Effects on the Infrared Absorption Edges of III-V CompoundsPhysical Review B, 1965
- Interband magneto-optical absorption in gallium arsenidePhysics Letters, 1965
- Band parameters of semiconductors with zincblende, wurtzite, and germanium structureJournal of Physics and Chemistry of Solids, 1963
- Theory of Optical Magneto-Absorption Effects in SemiconductorsPhysical Review B, 1959
- Quantum Theory of Cyclotron Resonance in Semiconductors: General TheoryPhysical Review B, 1956