100-K Operation of Al-Based Single-Electron Transistors
- 1 November 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (11A), L1465
- https://doi.org/10.1143/jjap.35.l1465
Abstract
We have made Al-based single-electron transistors with an artificially fabricated 20-nm island electrode by utilizing standard electron-beam lithography and three-angle shadow evaporation. A periodic gate-voltage dependence of current at above 100 K is demonstrated with this device. In addition, we increased the charging energy about 20% by using anodization.Keywords
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