Mixed-configuration ground state for intermediate-valence Sm compounds
- 15 April 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 13 (8), 3506-3510
- https://doi.org/10.1103/physrevb.13.3506
Abstract
As a model for the electronic properties of Sm compounds and alloys showing configuration mixing we study the two-band Hubbard Hamiltonian generalized to include the interatomic Coulomb mechanism for configuration mixing suggested by Kaplan and Mahanti. This model can exhibit a localized mixed-configuration ground state as indicated by experiments on some alloys. The stability of this state against delocalization of the electrons is studied as a function of the parameters of the model.Keywords
This publication has 10 references indexed in Scilit:
- Localized-electron mechanism for configuration mixing in Sm compoundsPhysics Letters A, 1975
- Virtual Bound States and Configurational Mixing inAlloysPhysical Review Letters, 1975
- ESCA study of electronic structure of SmB6Solid State Communications, 1975
- The semiconductor-metal transition of the samarium mono-chalcogenidesSolid State Communications, 1972
- Direct Optical Observation of the Semiconductor-to-Metal Transition in SmS under PressurePhysical Review B, 1972
- Metal-insulator transitions: a coherent potential approximationJournal of Physics C: Solid State Physics, 1972
- Physical Properties of SmPhysical Review B, 1971
- Continuous and Discontinuous Semiconductor-Metal Transition in Samarium Monochalcogenides Under PressurePhysical Review Letters, 1970
- Electronic and Magnetic Structure of SmPhysical Review Letters, 1970
- Simple Model for Semiconductor-Metal Transitions: Smand Transition-Metal OxidesPhysical Review Letters, 1969