Heavily boron-doped Si layers grown below 700 °C by molecular beam epitaxy using a HBO2 source
- 21 August 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (8), 795-797
- https://doi.org/10.1063/1.101763
Abstract
Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500–700 °C using a HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary‐ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550–700 °C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron‐doped layers have been grown at 600 °C without detectable oxygen incorporation.Keywords
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