Exciton Storage in Semiconductor Self-Assembled Quantum Dots
- 17 December 1999
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 286 (5448), 2312-2314
- https://doi.org/10.1126/science.286.5448.2312
Abstract
Storage and retrieval of excitons were demonstrated with semiconductor self-assembled quantum dots (QDs). The optically generated excitons were dissociated and stored as separated electron-hole pairs in coupled QD pairs. A bias voltage restored the excitons, which recombined radiatively to provide a readout optical signal. The localization of the spatially separated electron-hole pair in QDs was responsible for the ultralong storage times, which were on the order of several seconds. The present limits of this optical storage medium are discussed.Keywords
This publication has 11 references indexed in Scilit:
- Charge separation in coupled InAs quantum dots and strain-induced quantum dotsApplied Physics Letters, 1999
- A Semiconductor-Based Photonic Memory CellScience, 1999
- Spatially Resolved Spectroscopy of Single and Coupled Quantum DotsJapanese Journal of Applied Physics, 1999
- Electrical detection of optically induced charge storage in self-assembled InAs quantum dotsApplied Physics Letters, 1998
- Multiexciton Spectroscopy of a Single Self-Assembled Quantum DotPhysical Review Letters, 1998
- Acoustically Driven Storage of Light in a Quantum WellPhysical Review Letters, 1997
- Shell structure and electron-electron interaction in self-assembled InAs quantum dotsEurophysics Letters, 1996
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Γ-X-Γ electron transfer in mixed type I-type II GaAs/AlAs quantum well structuresSolid State Communications, 1992
- Study of time-resolved luminescence in GaAs doping superlatticesPhysical Review B, 1983