Studies of the frequency-dependent admittances of Schottky barriers formed on sputtered hydrogenated amorphous silicon
- 1 June 1984
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 49 (6), 565-595
- https://doi.org/10.1080/13642818408227646
Abstract
Measurements of the frequency-dependent capacitance and conductance of Schottky barriers formed on sputtered hydrogenated amorphous silicon made over a temperature range 300–450 K are described. The data are interpreted using a trap-release model, which fits the zero d.c.-bias data well at all temperatures. For measurements made at finite bias other physical effects have to be considered. At negative biases, generation/recombination processes via deep states are found to be important. These are incorporated qualitatively into the model and, as a result, information is obtained about the relative decay rates for holes and for electrons. Considerable evidence is found for a higher density of deep states close to the barrier than in the bulk of the film; in far-forward bias these extra states can be directly probed by the capacitance measurement. Our best films have a density of states in the region of the Fermi level of around 1016 eV−1 cm−3, with little energy dependence, in agreement with other recent observations using similar techniques.Keywords
This publication has 25 references indexed in Scilit:
- Frequency-dependent loss in amorphous semiconductorsAdvances in Physics, 1982
- Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap statesPhysical Review B, 1982
- Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopyPhysical Review B, 1982
- DETERMINATION OF MIDGAP DENSITY OF STATES IN a-Si : H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTSLe Journal de Physique Colloques, 1981
- STUDY OF LIGHT INDUCED CHANGES IN a-Si:H BY DETAILED COMPUTER MODELING OF ADMITTANCE AND DLTSLe Journal de Physique Colloques, 1981
- Observation of electron and hole traps in hydrogenated amorphous silicon by voltage- and laser-excited deep level transient spectroscopySolar Cells, 1980
- Capacitance studies on amorphous silicon Schottky barrier diodesJournal of Non-Crystalline Solids, 1980
- R.F. sputtered amorphous silicon schottky Barrier solar cellsRevue de Physique Appliquée, 1978
- Recombination velocity effects on current diffusion and imref in schottky barriersSolid-State Electronics, 1971
- Effet tunnel assisté par des niveaux liésJournal de Physique, 1971