High-pressure studies of GaAs-As quantum wells of widths 26 to 150 Å
- 15 June 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (12), 8416-8423
- https://doi.org/10.1103/physrevb.33.8416
Abstract
Photoluminescence spectra of GaAs quantum wells of widths 26 to 150 Å are studied as a function of hydrostatic pressure (0–70 kbar) at 80 and 150 K. The pressure coefficients of both the heavy- and light-hole excitons are found to decrease with decreasing well width. The direct to indirect conduction-band crossover, leading to the formation of type-II heterostructures, occurs at higher pressures for wider wells. A transition associated with the X conduction band in quantum-well structures is observed and its pressure dependence is established. Correlating this transition to barrier-to-well recombination determines the valence-band offset.Keywords
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