High pressure measurements on visible spectrum AlxGa1−xAs heterostructure lasers: 7100–6750-Å 300-K operation

Abstract

Pressure applied to high performance cw 300‐K bulk‐limit (L_z∼ 600 Å) single quantum well heterostructure Al_xGa_1−xAs (x∼0.28, λ∼7100 Å) laser diodes is used to simulate composition change and determine the threshold increase at shorter wavelength. Unless small quantum well sizes are employed in more sophisticated designs it is unlikely that λ (for cw 300‐K operation) can be made much less than 6900 Å.