Ultraviolet GaN light-emitting diodes grown by molecular beam epitaxy using NH3
- 5 January 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (1), 82-84
- https://doi.org/10.1063/1.120651
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Gas source molecular beam epitaxy of wurtzite GaN on sapphire substrates using GaN buffer layersApplied Physics Letters, 1997
- Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaNJournal of Electronic Materials, 1997
- Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayersApplied Physics Letters, 1996
- Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kineticsJournal of Applied Physics, 1996
- GaN grown by molecular beam epitaxy at high growth rates using ammonia as the nitrogen sourceApplied Physics Letters, 1995
- High transconductance-normally-off GaN MODFETsElectronics Letters, 1995
- Blue-violet light emitting gallium nitride p-n junctions grown by electron cyclotron resonance-assisted molecular beam epitaxyApplied Physics Letters, 1995
- Epitaxial Growth of GaN Films Produced by ECR-Assisted MBEMRS Proceedings, 1995
- A Study on Radical Fluxes in Silane Plasma CVD from Trench Coverage AnalysisJapanese Journal of Applied Physics, 1989
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986