Modulation of quantized levels of GaAs/AlGaAs quantum wells by InAs monomolecular plane insertion
- 16 April 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (16), 1555-1557
- https://doi.org/10.1063/1.103172
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Photoluminescence from highly-flat-interface InAs/GaAs heterostructures grown by flow-rate modulation epitaxyJournal of Crystal Growth, 1988
- Thermally induced In/Ga interdiffusion in InxGa1−xAs/GaAs strained single quantum well grown by LPMOVPEJournal of Crystal Growth, 1988
- Efficient Si Planar Doping in GaAs by Flow-Rate Modulation EpitaxyJapanese Journal of Applied Physics, 1986
- Photocurrent spectroscopic observation of interband transitions in GaAs-AlGaAs quantum wells under an applied high electric fieldSurface Science, 1986