Photoluminescence from highly-flat-interface InAs/GaAs heterostructures grown by flow-rate modulation epitaxy
- 31 December 1988
- journal article
- editorial
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4), 936
- https://doi.org/10.1016/0022-0248(88)90648-3
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- Photoluminescence from InGaAs-GaAs strained-layer superlattices grown by flow-rate modulation epitaxyApplied Physics Letters, 1988