Transition temperatures and heats of crystallization of amorphous Ge, Si, and Ge1−xSix alloys determined by scanning calorimetry
- 1 June 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (6), 4003-4006
- https://doi.org/10.1063/1.329209
Abstract
The transition temperatures (Tt) and heats of crystallization (ΔH) of a‐Ge, a‐Si, and a‐Ge1−xSix films deposited by rf sputtering have been measured by differential scanning calorimetry (DSC). Both Tt and ΔH (per gram) increase linearly with x in the alloy system. Overlapping exothermic multiple peaks are observed in the DSC traces of a‐Ge and a‐Si samples prepared at high deposition rates, suggesting that multiple amorphous configurations may coexist in these materials.Keywords
This publication has 15 references indexed in Scilit:
- Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiationApplied Physics Letters, 1978
- Structural transformations in a-Ge alloy filmsPhysica Status Solidi (a), 1976
- Amorphous silicon solar cellApplied Physics Letters, 1976
- Crystallization of amorphous silicon films by Nd:YAG laser heatingApplied Physics Letters, 1975
- Comment on the heat of crystallization of amorphous germaniumJournal of Non-Crystalline Solids, 1973
- On the structure of amorphous Ge and SiThin Solid Films, 1972
- Is there an intimate relation between amorphous and crystalline semiconductors?Journal of Non-Crystalline Solids, 1972
- Structure of amorphous semiconductorsJournal of Non-Crystalline Solids, 1972
- New Noncrystalline Germanium which Crystallizes ``Explosively'' at Room TemperatureApplied Physics Letters, 1972
- Evaluation of the Heat of Crystallization of Amorphous GermaniumNature, 1970