Coherent Growth of ZnSe on GaAs by MOCVD
- 1 August 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (8A), L578
- https://doi.org/10.1143/jjap.24.l578
Abstract
The lattice parameters of ZnSe have been studied for epitaxial layers of different thicknesses grown on GaAs (100) substrates by metalorganic chemical vapor deposition (MOCVD) using dimethylzinc and diethylselenide as source materials. The results indicate that layers thinner than 0.15 µm can grow coherently on GaAs involving strains due to the lattice mismatch between ZnSe and GaAs, while thicker layers contain misfit dislocations introduced by the relaxation of strain.Keywords
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