Effects of |H2Se|/|DMZn| Molar Ratio on Epitaxial ZnSe Films Grown by Low-Pressure MOCVD
- 1 October 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (10A), L773
- https://doi.org/10.1143/jjap.23.l773
Abstract
Effects of the |H2Se|/|DMZn| molar ratio on the electrical and optical properties of nominally undoped ZnSe films grown on (100) GaAs substrates by low-pressure MOCVD have been studied. It was found that the carrier concentration in the films decreases with the molar ratio, while the luminescence intensity ratio between the NBE emission and that from deep centers increases. Furthermore, the distance between an inlet nozzle for DMZn and the substrate was found to give qualitatively the same effects to the properties of ZnSe films as those by the molar ratio.Keywords
This publication has 7 references indexed in Scilit:
- Formation of Embedded Monocrystalline NiSi2 Grid Layers in Silicon by MBEJapanese Journal of Applied Physics, 1984
- Growth and Properties of Undoped n-Type ZnSe by Low-Temperature and Low-Pressure OMVPEJapanese Journal of Applied Physics, 1984
- New and Simple MOCVD Technique Using Completely Gaseous MO-Sources Especially Useful for Growing Zn-Chalcogenide FilmsJapanese Journal of Applied Physics, 1984
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982
- Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor depositionJournal of Crystal Growth, 1982
- Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour depositionThin Solid Films, 1978
- Organometallic vapor deposition of epitaxial ZnSe films on GaAs substratesApplied Physics Letters, 1978