HOT-HOLE ANISOTROPY IN SILICON
- 1 June 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (11), 432-433
- https://doi.org/10.1063/1.1653055
Abstract
Experimental results on the hole drift mobility in silicon are presented. The electric field is applied parallel to the and crystallographic directions at four different temperatures between 77 and 300°K. The measurements have been performed with the time‐of‐flight technique. Experimental evidence is given for the first time of anisotropy of drift velocity of holes at intermediate and high electric fields.Keywords
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