Electron transport in sub-micron GaAs channels at 300 K
- 1 June 1983
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 31 (2), 65-70
- https://doi.org/10.1007/bf00616306
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Monte-Carlo simulation of space-charge injection FETElectronics Letters, 1982
- Measurement of J/V characteristics of a GaAs submicron n+-n−-n+ diodeElectronics Letters, 1982
- Ballistic transport in a nonparabolic band structureJournal of Applied Physics, 1981
- Application of Monte Carlo techniques to hot carrier diffusion noise calculation in unipolar semiconducting componentsSolid-State Electronics, 1980
- On the physics and modeling of small semiconductor devices—III: Transient response in the finite collision-duration regimeSolid-State Electronics, 1980
- GaAs n+-p−-n+ ballistic structureElectronics Letters, 1980
- Ballistic electron transport in a nonparabolic bandElectronics Letters, 1980
- Dynamical Response of Electrons in GaAs at 300 KPhysica Status Solidi (b), 1977
- Effect of ionised impurity scattering on the electron transit time in GaAs and InP f.e.t.sElectronics Letters, 1977
- Low-temperature f.e.t. for low-power high-speed logicElectronics Letters, 1977