GaAs n+-p−-n+ ballistic structure
- 1 January 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (13), 522-523
- https://doi.org/10.1049/el:19800365
Abstract
Potential distribution and I/V characteristics of short n+-p−-n+ devices are calculated assuming ballistic electron transport (no collisions). The results of the calculation are in good agreement with experimental results for submicrometre GaAs n+-p−-n+ structures.Keywords
This publication has 1 reference indexed in Scilit:
- Ballistic electron motion in GaAs at room temperatureElectronics Letters, 1980