Temperature dependence of minority-carrier recombination velocities at grain boundaries in silicon
- 1 November 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (9), 855-857
- https://doi.org/10.1063/1.93675
Abstract
Measurements have been made of the temperature dependence of grain boundary minority-carrier recombination velocities in p-type polycrystalline silicon. This temperature dependence is found to be close to that observed for the dark resistance to across-boundary majority-carrier currents. We discuss this result in light of recent theoretical calculations of this effect.Keywords
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