Dominant formation and quenching processes in-beam pumped ArF and KrF lasers
- 1 December 1977
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review A
- Vol. 16 (6), 2216-2224
- https://doi.org/10.1103/physreva.16.2216
Abstract
The dominant formation and quenching processes in -beam pumped ArF* and KrF* lasers are discussed. The quenching of ArF* by and Ar has been measured by analyzing the ArF* () fluorescence as a function of the and Ar partial pressures. We have also measured the displacement of the Ar in ArF* by Kr to form KrF*. The dominant quenching processes of KrF* were identified, and the rate constants were measured. The ArF* and KrF* are formed from the ionic states with high efficiency. Interception of the precursors can be made negligible by choosing the experimental conditions properly. The quenching of KrF* by Ar and Kr is mainly a three-body process resulting in the formation of F*. The emission from F* was observed in a broadband centered at 410 nm. We have verified that the F* is produced subsequent to the KrF* formation by performing a laser saturation experiment.
Keywords
This publication has 19 references indexed in Scilit:
- Quenching rate constants for metastable argon, krypton, and xenon atoms by fluorine containing molecules and branching ratios for XeF* and KrF* formationThe Journal of Chemical Physics, 1976
- Electron-beam-controlled discharge pumping of the XeF laserApplied Physics Letters, 1976
- Fast-discharge-initiated XeF laserApplied Physics Letters, 1976
- Xenon fluoride laser excitation by transverse electric dischargeApplied Physics Letters, 1976
- Electron-beam-controlled discharge pumping of the KrF laserApplied Physics Letters, 1975
- 354-nm laser action on XeFApplied Physics Letters, 1975
- High-power xenon fluoride laserApplied Physics Letters, 1975
- Laser action on the 2Σ+1/2→2Σ+1/2 bands of KrF and XeClApplied Physics Letters, 1975
- Stimulated emission at 281.8 nm from XeBrApplied Physics Letters, 1975
- Quenching studies of Xe(3P2) metastable atomsIEEE Journal of Quantum Electronics, 1975