A new discretization scheme for the semiconductor current continuity equations
- 1 May 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 8 (5), 479-489
- https://doi.org/10.1109/43.24876
Abstract
A hybrid finite-element method to discretize the continuity equation in semiconductor device simulation is given. Within each element of a finite element discretization, the current is uniquely determined by nodal values of the density and the potential. The authors use the integrability condition for a system of partial differential equations to obtain the equations that determine the current within the element. They then satisfy the continuity in the current flow across interelement boundaries in a weak sense. They have found that the method works in any dimension and for (d-dimensional) simplexes as well as for quadrilaterals, bricks, prisms, and so on, although they have no proof that it will not break down in particular casesKeywords
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