Gain Factor and Loss in a GaxAl1-xAs-GaAs Laser Diode
- 1 February 1970
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 9 (2), 231-232
- https://doi.org/10.1143/jjap.9.231
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- A low-threshold room-temperature injection laserIEEE Journal of Quantum Electronics, 1969
- A technique for the preparation of low-threshold room-temperature GaAs laser diode structuresIEEE Journal of Quantum Electronics, 1969
- Threshold current density in solution-grown GaAs laser diodesIEEE Journal of Quantum Electronics, 1967
- Modification of the Threshold Current of GaAs Laser by a Reflective Coating on One EndJapanese Journal of Applied Physics, 1965
- Effect of temperature on the stimulated emission from GaAs p-n junctionsSolid-State Electronics, 1964