Model and performance of hot-electron MOS transistors for VLSI
- 1 April 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 14 (2), 435-442
- https://doi.org/10.1109/jssc.1979.1051195
Abstract
No abstract availableKeywords
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