D-MOS transistor for microwave applications

Abstract

A new n-channel silicon MOS transistor is described that can be fabricated with channel lengths of less than 1 µ by using a double-diffusion process similar to that used in bipolar transistor fabrication. The dimensional tolerances are not tighter than those used in the processing of conventional MOS transistors. This device (called D-MOST) shows gain in the GHz range and a noise figure comparable to that of microwave transistors. The fmaxis 10 GHz and the noise figure is 4.0 dB at 1 GHz. A brief theory of the D-MOST is followed by the design considerations for a discrete microwave device. Results from s-parameter measurements in the range of 0.1-2.5 GHz are presented along with graphs showing the gains and the stability factor. A simple equivalent circuit is derived from the measurements. Applications of the D-MOST are described.