A fully-integrated CMOS RF front-end for Wi-Fi and Bluetooth
- 23 December 2004
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A fully-integrated CMOS RF front-end for ISM band applications is presented. The RF front-end is designed in a 0.18 /spl mu/m RF CMOS technology and used in a zero-IF Wi-Fi (IEEE 802.11b WLAN) and low-IF Bluetooth receiver. The RF front-end provides dual gain mode, 25 dB or 15 dB, to alleviate the linearity requirements of the following stages such as analog baseband filters and variable-gain amplifiers. It also presents low noise figure and high linearity. Noise figure, IIP3, and IIP2 are 4.1 dB, -11.6 dBm, 43.2 dBm for high gain mode, and 10.1 dB, -3.5 dBm, 55.2 dBm for low gain mode, respectively. The power consumption of the RF front-end is significantly reduced by using zero-IF/low-IF receiver architectures and only 22.7 mW from a 1.8 V supply voltage. The corner frequency of the flicker noise is only 46 kHz. The bondpad and package parasitics are also taken into account for the design and simulation.Keywords
This publication has 5 references indexed in Scilit:
- Linearity analysis and design optimisation for 0.18 μm CMOS RF mixerIEE Proceedings - Circuits, Devices and Systems, 2002
- Low 1/f noise CMOS active mixers for direct conversionIEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, 2001
- A dual-band RF front-end for WCDMA and GSM applicationsIEEE Journal of Solid-State Circuits, 2001
- A 2.4-GHz CMOS receiver for IEEE 802.11 wireless LANsIEEE Journal of Solid-State Circuits, 1999
- Design considerations for direct-conversion receiversIEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, 1997