Electronically induced modifications of a-Si:H(P) films by scanning tunneling microscopy
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 1067-1070
- https://doi.org/10.1016/s0022-3093(05)80306-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Experimental tests of the autocompensation model of dopingPhilosophical Magazine Part B, 1991
- Tunneling barrier height imaging and polycrystalline Si surface observationsJournal of Vacuum Science & Technology A, 1990
- Band bending and the apparent barrier height in scanning tunneling microscopyPhysical Review B, 1989
- Experimental barrier heights and the image potential in scanning tunneling microscopySurface Science, 1988
- Apparent barrier height in scanning tunneling microscopyPhysical Review B, 1988
- Evidence of Schottky emission in scanning tunneling microscopes operated in ambient airApplied Physics Letters, 1988
- Transition from the tunneling regime to point contact studied using scanning tunneling microscopyPhysical Review B, 1987
- A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous siliconApplied Physics A, 1986
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977