Gettering of surface and bulk impurities in Czochralski silicon wafers
- 1 June 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (11), 747-749
- https://doi.org/10.1063/1.89908
Abstract
The ability of SiO2 precipitates to act as a source of process‐induced defects which can either beneficially getter unwanted impurities, or deleteriously interact with surface devices, has led to some confusion in interpreting the role of wafer oxygen content in device processing. This report presents a composite model which explains the many variables involved in oxygen precipitation and gettering phenomena.Keywords
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