A Design and Packaging Technique for a High-Gain, Gigahertz-Band Single-Chip Amplifier
- 1 June 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 21 (3), 417-423
- https://doi.org/10.1109/jssc.1986.1052544
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A 30-ps Si bipolar IC using super self-aligned process technologyIEEE Transactions on Electron Devices, 1986
- High Gain Equalizing Amplifier Integrated Circuits for a Gigabit Optical RepeaterIEEE Journal of Solid-State Circuits, 1985
- Bipolar monolithic amplifiers for a gigabit optical repeaterIEEE Journal of Solid-State Circuits, 1984
- Gigabit logic bipolar technology: advanced super self-aligned process technologyElectronics Letters, 1983
- A DC-12 GHz monolithic GaAsFET distributed amplifierIEEE Transactions on Electron Devices, 1982