Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230 °C Using (111)Si as a Starting Substrate
- 20 April 2007
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 46 (5L), L389-391
- https://doi.org/10.1143/jjap.46.l389
Abstract
No abstract availableKeywords
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