Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates
- 6 November 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 246 (3-4), 187-193
- https://doi.org/10.1016/s0022-0248(02)01741-4
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystalsJournal of Crystal Growth, 2002
- Growth of bulk AlN crystals by vaporization of aluminum in a nitrogen atmosphereJournal of Crystal Growth, 2002
- Gallium nitride based transistorsJournal of Physics: Condensed Matter, 2001
- Single-Crystal Aluminum Nitride Substrate Preparation from Bulk CrystalsMRS Proceedings, 2001
- Temperature Dependence of the Phonons of Bulk AlNJapanese Journal of Applied Physics, 2000
- A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon CarbideMaterials Science Forum, 2000
- Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substratesJournal of Crystal Growth, 2000
- Chemical polishing of bulk and epitaxial GaNJournal of Crystal Growth, 1997
- Morphology and X-Ray Diffraction Peak Widths of Aluminum Nitride Single Crystals Prepared by the Sublimation MethodJapanese Journal of Applied Physics, 1997
- Growth of high purity AlN crystalsJournal of Crystal Growth, 1976