Growth temperature dependent radiative relaxation in AlGaAs/GaAs multiple quantum wells
- 24 July 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (4), 362-364
- https://doi.org/10.1063/1.101893
Abstract
Decay times of photoexcited electrons in AlGaAs/GaAs multiple quantum wells are evaluated using a time-correlated photon counting method. The decay time was observed to increase with crystal growth temperature between 600 and 730 °C for metalorganic chemical vapor deposition. It also increased with the photoluminescence sample temperature, in agreement with theoretical considerations based on Fermi’s golden rule.Keywords
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