Interfacial recombination velocity in GaAlAs/GaAs heterostructures
- 1 June 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (11), 761-763
- https://doi.org/10.1063/1.89921
Abstract
Photoluminescence time‐decay measurements on Ga0.5Al0.5As/GaAs double heterostructures were made over a wide range of GaAs active layer thickness and doping levels at room temperature. Observed decay times τ in variously doped GaAs samples range from 10 to 450 nsec. Effects of self‐absorption of luminescence and doping level are demonstrated for GaAs layer thickness d≳1 μm. For dd. The data are interpreted in terms of a small interfacial recombination velocity (Si=450±100 cm/sec) at the Ga0.5Al0.5As/GaAs interface. The value of Si determined here is an average over the doping levels examined.Keywords
This publication has 13 references indexed in Scilit:
- A search for interface states in an LPE GaAs/AlxGa1−xAs heterojunctionApplied Physics Letters, 1977
- Nonradiative ’’large dark spots’’ in AlxGa1−xAs-GaAs heterostructuresJournal of Applied Physics, 1977
- Identification of the defect state associated with a gallium vacancy in GaAs andPhysical Review B, 1977
- Self-absorption effects on the radiative lifetime in GaAs-GaAlAs double heterostructuresJournal of Applied Physics, 1977
- Control of lattice parameters and dislocations in the system Ga1−xAlxAs1−yPy/GaAsJournal of Crystal Growth, 1974
- Control of lattice parameters and dislocations in the system Ga1−xAlxAs1−yPy/GaAsJournal of Crystal Growth, 1974
- Gallium arsenide and (alga)as devices prepared by Liquid-Phase epitaxy (Review Article)Journal of Electronic Materials, 1974
- How much Al in the AlGaAs–GaAs laser?Journal of Applied Physics, 1974
- Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnetJournal of Crystal Growth, 1973
- Quantum Efficiency and Radiative Lifetime of the Band-to-Band Recombination in Heavily Doped-Type GaAsPhysical Review B, 1972