Transient temperature response of vertical-cavity surface-emitting semiconductor lasers
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 31 (9), 1668-1673
- https://doi.org/10.1109/3.406381
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Temperature dependence of transverse mode evolution in vertical cavity surface-emitting lasersOptical Engineering, 1994
- Temperature dependence of photoluminescence in InAsP/InP strained multiple quantum wellsJournal of Applied Physics, 1994
- Dynamic, polarization, and transverse mode characteristics of vertical cavity surface emitting lasersIEEE Journal of Quantum Electronics, 1991
- Thermal properties of etched-well surface-emitting semiconductor lasersIEEE Journal of Quantum Electronics, 1991
- Anomalous temporal response of gain guided surface emitting lasersElectronics Letters, 1991
- Analysis of current spreading, carrier diffusion, and transverse mode guiding in surface emitting lasersJournal of Applied Physics, 1990
- 90% coupling of top surface emitting GaAs/AlGaAs quantum well laser output into 8 [micro sign]m diameter core silica fibreElectronics Letters, 1990
- Low-threshold electrically pumped vertical-cavity surface-emitting microlasersElectronics Letters, 1989
- Thermal resistance of light-emitting diodesIEEE Transactions on Electron Devices, 1985
- Temperature Distributions in the GaAs-AlGaAs Double-Heterostructure Laser below and above the Threshold CurrentJapanese Journal of Applied Physics, 1975