Technique for the direct synthesis and growth of indium phosphide by the liquid phosphorus encapsulated Czochralski method
- 12 January 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (2), 86-88
- https://doi.org/10.1063/1.97827
Abstract
The direct synthesis and growth of InP have been successfully performed by the newly developed liquid P encapsulated Czochralski technique. We have developed a way to use liquid P both as a source element for the synthesis instead of P gas, and also as an ‘‘encapsulant’’ for the Czochralski growth instead of B2O3. The existence of two distinct layers, liquid P and molten InP, has been discovered during the process. Grown single crystals showed a carrier concentration of as low as 5×1015 cm−3.Keywords
This publication has 8 references indexed in Scilit:
- In-situ observation of LEC GaAs solid-liquid interface with newly developed X-ray image processing systemJournal of Crystal Growth, 1986
- A novel application of the vertical gradient freeze method to the growth of high quality III–V crystalsJournal of Crystal Growth, 1986
- Preparation and characterization of high purity bulk InPJournal of Crystal Growth, 1983
- Synthesis of indium phosphideJournal of Crystal Growth, 1983
- In-situ synthesis and growth of indium phosphideJournal of Electronic Materials, 1983
- A method for the “in-situ” synthesis and growth of indium phosphide in a Czochralski pullerJournal of Crystal Growth, 1982
- Growth and crystal quality of inp crystals by the liquid encapsulated czochralski techniqueJournal of Electronic Materials, 1981
- A thermodynamic evaluation of the simplesolution treatment of the Ga-P, In-P and Ga-As systemsJournal of Crystal Growth, 1974