Growth and crystal quality of inp crystals by the liquid encapsulated czochralski technique
- 1 September 1981
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 10 (5), 941-956
- https://doi.org/10.1007/bf02661009
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Silicon Contamination of InP Synthesized under High Phosphorus PressureJournal of the Electrochemical Society, 1981
- Growth of Dislocation-Free Undoped InP CrystalsJapanese Journal of Applied Physics, 1980
- A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs CrystalsBell System Technical Journal, 1980
- Reproducible preparation of twin-free InP crystals using the LEC techniqueMaterials Research Bulletin, 1980
- Photoluminescence characterization of solution and lec grown InPJournal of Electronic Materials, 1979
- Room-temperature operation of lattice-matched InP/Ga0.47In0.53As/InP double-heterostructure lasers grown by MBEApplied Physics Letters, 1978
- GaInAsP/InP avalanche photodiodesApplied Physics Letters, 1978
- Impurity effect on the growth of dislocation-free InP single crystalsJournal of Applied Physics, 1976
- The preparation of CdSnP2/InP heterojunctions by liquid phase epitaxy from Sn-solutionJournal of Electronic Materials, 1974
- The growth of InP crystals from the meltJournal of Electronic Materials, 1974