Epitaxial hemispherical electroluminescent diode
- 28 February 1967
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (2), 158-160
- https://doi.org/10.1016/0038-1101(67)90035-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Effect of higher absorption in non-lasing GaAs diodes at 300°KIEEE Journal of Quantum Electronics, 1966
- Internal Quantum Efficiency of GaAs Electroluminescent DiodesJournal of Applied Physics, 1965
- Characteristics of a GaAs spontaneous infrared source with 40 percent efficiencyIEEE Transactions on Electron Devices, 1965
- Improving the External Efficiency of Electroluminescent DiodesJournal of Applied Physics, 1965
- Light emission from injecting contacts on germanium in the 2μ to 6μ bandPhysica, 1954