Luminescence of AlxGa1−xAs grown by MOVPE
- 1 October 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 55 (1), 192-197
- https://doi.org/10.1016/0022-0248(81)90287-6
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Growth of High-Quality AlxGa1−xAs By OMVPE for laser devicesJournal of Electronic Materials, 1981
- Electron mobility in compensated GaAs and AlxGa1−xAsJournal of Applied Physics, 1980
- Photoluminescence of shallow acceptors in epitaxial AlxGa1−xAsJournal of Applied Physics, 1980
- The trend of deep states in organometallic vapor-phase epitaxial GaAs with varying As/Ga ratiosApplied Physics Letters, 1980
- Electron mobility in AlxGa1−xAsJournal of Applied Physics, 1979
- Room-temperature operation of Ga(1−x)AlxAs/GaAs double-heterostructure lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1977