The trend of deep states in organometallic vapor-phase epitaxial GaAs with varying As/Ga ratios

Abstract

Traps in organometallic vapor‐phase GaAs have been characterized. The dominant electron trap present in conventional vapor‐phase epitaxial GaAs is also present in organometallic GaAs with an activation energy ΔE⁰_T +ΔE_B=0.820.02 eV and a capture cross section σ_∞= (1.71.0) ×10⁻¹⁴ cm². A linear dependence of the trap concentration on As/Ga ratio in the material indicates the involvement of a Ga vacancy in the formation of the center. A second electron trap with an activation energy of 0.360.02 eV and hole traps with activation energies of 0.30 and 0.35 eV have been identified and their capture cross section and density determined.