Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiation
- 15 September 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (6), 542-544
- https://doi.org/10.1063/1.90430
Abstract
Arsenic‐ and antimony‐implanted silicon wafers have been annealed by a cw Ar ion laser. Glancing‐angle Rutherford backscattering and transmission electron and optical microscopy measurements indicate that the mechanism for recrystallization is one of thermal solid‐phase regrowth from the underlying crystalline‐amorphous interface. No implant redistribution is observed.Keywords
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