Interface morphology studies of (110) and (111) Ge-GaAs grown by molecular beam epitaxy
- 15 June 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (12), 1037-1039
- https://doi.org/10.1063/1.92987
Abstract
Interface morphologies of (110) and (111) Ge-GaAs grown by molecular beam epitaxy (MBE) have been studied using reflection high energy electron diffraction (RHEED). For the (110) Ge- GaAs, planar growths of both GaAs on Ge and Ge on GaAs are observed. The (111) Ge-GaAs, on the other hand, shows a rough growth of GaAs on Ge, and a planar one of Ge on GaAs, similar to those of (100) Ge-GaAs. The (110) and (111) results are discussed in terms of the orientation effect on the MBE growth of compound semiconductors and are consistent with that on (100) Ge-GaAs.Keywords
This publication has 14 references indexed in Scilit:
- Atomic reconstruction at polar interfaces of semiconductorsJournal of Vacuum Science and Technology, 1980
- Combined LEED, AES, and work function studies during the formation of Ge : GaAs(110) heterostructuresJournal of Vacuum Science and Technology, 1980
- Electronic structure of the Ge-GaAs and Ge-ZnSe (100) interfacesPhysical Review B, 1980
- Surface reactions and interdiffusionJournal of Vacuum Science and Technology, 1979
- Electronic structure in GaAs/Ge through angle-resolved photoemissionJournal of Vacuum Science and Technology, 1979
- Molecular beam epitaxy of Ge and Ga1−xAlxAs ultra thin film superlatticesJournal of Crystal Growth, 1979
- Polar heterojunction interfacesPhysical Review B, 1978
- Ge–GaAs(110) interface formationJournal of Vacuum Science and Technology, 1978
- Ge-GaAs (110) Interface: A Self-Consistent Calculation of Interface States and Electronic StructurePhysical Review Letters, 1977
- Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge InterfacePhysical Review Letters, 1977