Free Carrier Profile Synthesis in MOCVD Grown GaAs by `Atomic-Plane' Doping
- 1 June 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (6A), L369
- https://doi.org/10.1143/jjap.23.l369
Abstract
Synthesis of free carrier profiles in GaAs by metalorganic chemical vapor deposition is realized by `atomic-plane' doping, in which growth is suspended while doping gas is introduced. Silicon, which stays on the surface even without GaAs growth, is used as a dopant for the `atomic-plane' doping.Keywords
This publication has 3 references indexed in Scilit:
- Influence of Substrate Temperature on the Growth of AlGaAs/GaAs Quantum Well Heterostructures by Organometallic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1983
- Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAsJournal of Applied Physics, 1980
- Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine methodJournal of Crystal Growth, 1979